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BCR22PNE6327BTSA1

TRANS NPN/PNP PREBIAS SOT363

制造商 Infineon Technologies
制造商零件编号 BCR22PNE6327BTSA1
标准包装 3000
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Resistor - Base (R1) (Ohms) 22k
-Power - Max 250mW
-Resistor - Emitter Base (R2) (Ohms) 22k
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-Packaging Tape & Reel (TR)
-Frequency - Transition 130MHz
-Package / Case 6-VSSOP, SC-88, SOT-363
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Supplier Device Package PG-SOT363-6
-Part Status Obsolete
-Manufacturer Infineon Technologies
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V

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