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BCR198WE6327BTSA1

TRANS PREBIAS PNP 250MW SOT323-3

Manufacturer Infineon Technologies
MPN BCR198WE6327BTSA1
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Resistor - Base (R1) (Ohms) 47k
-Power - Max 250mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
-Frequency - Transition 190MHz
-Package / Case SC-70, SOT-323
-Transistor Type PNP - Pre-Biased
-Supplier Device Package PG-SOT323-3
-Part Status Obsolete
-Manufacturer Infineon Technologies
-Family Transistors - Bipolar (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Packaging Tape & Reel (TR)

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