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BCR135E6433HTMA1

TRANS PREBIAS NPN 200MW SOT23-3

Manufacturer Infineon Technologies
MPN BCR135E6433HTMA1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Resistor - Base (R1) (Ohms) 10k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
-Frequency - Transition 150MHz
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type NPN - Pre-Biased
-Supplier Device Package PG-SOT23-3
-Part Status Last Time Buy
-Manufacturer Infineon Technologies
-Family Transistors - Bipolar (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Packaging Tape & Reel (TR)

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