IPG20N06S2L35ATMA1

MOSFET_)40V,60V)

Manufacturer Infineon Technologies MPN IPG20N06S2L35ATMA1 SPQ 5000 ECCN -- Schedule B -- RoHS -- Datasheet --

SP1027 Dollar $1.87364 RMB ￥15.56179 Stock type SP1027 Stock num 4975 Stepped num price 26+ $1.87364 50+ $1.73988 100+ $1.3175 200+ $1.24388 500+ $1.0695 1000+ $0.96689 2000+ $0.89125

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-PowerVDFN
-Drain to Source Voltage (Vdss)	55V
-Current - Continuous Drain (Id) @ 25°C	20A
-Part Status	Active
-Manufacturer	Infineon Technologies
-Series	OptiMOS™
-Vgs(th) (Max) @ Id	2V @ 27µA
-Operating Temperature	-55°C ~ 175°C (TJ)
-Packaging	Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs	35 mOhm @ 15A, 10V
-Power - Max	65W
-Supplier Device Package	PG-TDSON-8-4 (5.15x6.15)
-Gate Charge (Qg) @ Vgs	23nC @ 10V
-Category	Discrete Semiconductor Products
-FET Type	2 N-Channel (Dual)
-Family	Transistors - FETs, MOSFETs - Arrays
-Mounting Type	Surface Mount
-Input Capacitance (Ciss) @ Vds	790pF @ 25V