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IGB03N120H2ATMA1

INDUSTRY 14

Manufacturer Infineon Technologies
MPN IGB03N120H2ATMA1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm) 9.9A
-Power - Max 62.5W
-Supplier Device Package PG-TO263-3
-Current - Collector (Ic) (Max) 9.6A
-Category Discrete Semiconductor Products
-Gate Charge 22nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
-Input Type Standard
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition 800V, 3A, 82 Ohm, 15V
-Td (on/off) @ 25°C 9.2ns/281ns
-Part Status Not For New Designs
-Manufacturer Infineon Technologies
-Voltage - Collector Emitter Breakdown (Max) 1200V
-Mounting Type Surface Mount
-Switching Energy 290µJ
-Packaging Tape & Reel (TR)

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