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BCR196E6327HTSA1

TRANS PREBIAS PNP 200MW SOT23-3

制造商 Infineon Technologies
制造商零件编号 BCR196E6327HTSA1
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Resistor - Base (R1) (Ohms) 47k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 22k
-Current - Collector (Ic) (Max) 70mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V
-Frequency - Transition 150MHz
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type PNP - Pre-Biased
-Supplier Device Package PG-SOT23-3
-Part Status Last Time Buy
-Manufacturer Infineon Technologies
-Family Transistors - Bipolar (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Packaging Tape & Reel (TR)

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