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BSO211PHXUMA1

Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8

Manufacturer Infineon Technologies
MPN BSO211PHXUMA1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 4A
-Part Status Active
-Manufacturer Infineon Technologies
-Series OptiMOS™
-Vgs(th) (Max) @ Id 1.2V @ 25µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 67 mOhm @ 4.6A, 4.5V
-Power - Max 1.6W
-Supplier Device Package PG-DSO-8
-Gate Charge (Qg) @ Vgs 10nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type 2 P-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 1095pF @ 15V

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