| -FET Feature |
Silicon Carbide (SiC) |
| -Package / Case |
TO-247-3 |
| -Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| -Current - Continuous Drain (Id) @ 25°C |
17.7A (Tc) |
| -Part Status |
Active |
| -Manufacturer |
Cree/Wolfspeed |
| -Series |
Z-FET™ |
| -Vgs(th) (Max) @ Id |
2.5V @ 500µA |
| -Operating Temperature |
-55°C ~ 150°C (TJ) |
| -Packaging |
Tube |
| -Rds On (Max) @ Id, Vgs |
196 mOhm @ 10A, 20V |
| -Power - Max |
125W |
| -Supplier Device Package |
TO-247-3 |
| -Gate Charge (Qg) @ Vgs |
32.6nC @ 20V |
| -Category |
Discrete Semiconductor Products |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Family |
Transistors - FETs, MOSFETs - Single |
| -Mounting Type |
Through Hole |
| -Input Capacitance (Ciss) @ Vds |
527pF @ 800V |
