| -FET Feature |
Silicon Carbide (SiC) |
| -Package / Case |
TO-247-3 |
| -Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| -Current - Continuous Drain (Id) @ 25°C |
36A (Tc) |
| -Part Status |
Active |
| -Manufacturer |
Cree/Wolfspeed |
| -Series |
C2M™ |
| -Vgs(th) (Max) @ Id |
4V @ 5mA |
| -Operating Temperature |
-55°C ~ 150°C (TJ) |
| -Packaging |
Bulk |
| -Rds On (Max) @ Id, Vgs |
98 mOhm @ 20A, 20V |
| -Power - Max |
192W |
| -Supplier Device Package |
TO-247-3 |
| -Gate Charge (Qg) @ Vgs |
62nC @ 5V |
| -Category |
Discrete Semiconductor Products |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Family |
Transistors - FETs, MOSFETs - Single |
| -Mounting Type |
Through Hole |
| -Input Capacitance (Ciss) @ Vds |
950pF @ 1000V |
