C2M0080120D

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; 208W; TO247-3; 32ns

Manufacturer Wolfspeed MPN C2M0080120D SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet C2M0080120D.pdf

SP1034 Dollar $30.63148 RMB ￥254.41429 Stock type SP1034 Stock num 78 Stepped num price 1+ $30.63148 SP1034 Dollar $30.63148 RMB ￥254.41429 Stock type SP1034 Stock num 375 Stepped num price 1+ $30.63148 SP1034 Dollar $29.83964 RMB ￥247.83754 Stock type SP1034 Stock num 450 Stepped num price 30+ $29.83964 150+ $29.24279 SP1027 Dollar $36.89 RMB ￥306.39535 Stock type SP1027 Stock num 1133 Stepped num price 3+ $36.89

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Product parameter

-FET Feature	Silicon Carbide (SiC)
-Package / Case	TO-247-3
-Drain to Source Voltage (Vdss)	1200V (1.2kV)
-Current - Continuous Drain (Id) @ 25°C	36A (Tc)
-Part Status	Active
-Manufacturer	Cree/Wolfspeed
-Series	C2M™
-Vgs(th) (Max) @ Id	4V @ 5mA
-Operating Temperature	-55°C ~ 150°C (TJ)
-Packaging	Bulk
-Rds On (Max) @ Id, Vgs	98 mOhm @ 20A, 20V
-Power - Max	192W
-Supplier Device Package	TO-247-3
-Gate Charge (Qg) @ Vgs	62nC @ 5V
-Category	Discrete Semiconductor Products
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	Transistors - FETs, MOSFETs - Single
-Mounting Type	Through Hole
-Input Capacitance (Ciss) @ Vds	950pF @ 1000V