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RN1901,LF(CT

TRANS 2NPN PREBIAS 0.2W US6

Manufacturer Toshiba
MPN RN1901,LF(CT
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Frequency - Transition 250MHz
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Supplier Device Package US6
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-Other Names RN1901(T5LFT)DKR RN1901(T5LFT)DKR-ND RN1901LF(CTDKR
-Product Photos 6-TSSOP, SC-88, SOT-363
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 1k
-Standard Package   1
-Packaging   Digi-Reel®  
-Datasheets RN1901-06 -
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V

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