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IPG20N06S2L50ATMA1

Dual N-Channel 55 V 50 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8-4

Manufacturer Infineon Technologies
MPN IPG20N06S2L50ATMA1
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-PowerVDFN
-Drain to Source Voltage (Vdss) 55V
-Current - Continuous Drain (Id) @ 25°C 20A
-Part Status Active
-Manufacturer Infineon Technologies
-Series OptiMOS™
-Vgs(th) (Max) @ Id 2V @ 19µA
-Operating Temperature -55°C ~ 175°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 50 mOhm @ 15A, 10V
-Power - Max 51W
-Supplier Device Package PG-TDSON-8-4 (5.15x6.15)
-Gate Charge (Qg) @ Vgs 17nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 560pF @ 25V
-ECCN EAR99

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