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SI7682DP-T1-GE3

MOSFET N-CH 30V 20A PPAK SO-8

Manufacturer Vishay
MPN SI7682DP-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Product Photos PowerPAK SO-8 Pkg
-Rds On (Max) @ Id, Vgs 9 mOhm @ 20A, 10V
-Power - Max 27.5W
-Supplier Device Package PowerPAK® SO-8
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Datasheets SI7682DP
-Series TrenchFET®
-Vgs(th) (Max) @ Id 2.5V @ 250µA
-Input Capacitance (Ciss) @ Vds 1595pF @ 15V
-FET Feature Standard
-Package / Case PowerPAK® SO-8
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 20A (Tc)
-Gate Charge (Qg) @ Vgs 38nC @ 10V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

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