English 简体中文 日本語

SI4196DY-T1-GE3

MOSFET N-CH 20V 8A 8SOIC

Manufacturer Vishay
MPN SI4196DY-T1-GE3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Product Photos 8-SOIC
-Rds On (Max) @ Id, Vgs 27 mOhm @ 8A, 4.5V
-Power - Max 4.6W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Datasheets SI4196DY
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1V @ 250µA
-Input Capacitance (Ciss) @ Vds 830pF @ 10V
-FET Feature Standard
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 8A (Tc)
-Gate Charge (Qg) @ Vgs 22nC @ 8V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

Copyright © 1997-2013 NetEase. All Rights Reserved.