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SI4176DY-T1-E3

MOSFET N-CH 30V 12A 8SO

Manufacturer Vishay
MPN SI4176DY-T1-E3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Product Photos 8-SOIC
-Rds On (Max) @ Id, Vgs 20 mOhm @ 8.3A, 10V
-Power - Max 5W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Datasheets SI4176DY
-Series TrenchFET®
-Vgs(th) (Max) @ Id 2.2V @ 250µA
-Input Capacitance (Ciss) @ Vds 490pF @ 15V
-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 12A (Tc)
-Gate Charge (Qg) @ Vgs 15nC @ 10V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

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