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SI3812DV-T1-GE3

MOSFET N-CH 20V 2A 6-TSOP

Manufacturer Vishay
MPN SI3812DV-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Product Photos 6-TSOP Pkg
-Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
-Power - Max 830mW
-Supplier Device Package 6-TSOP
-Gate Charge (Qg) @ Vgs 4nC @ 4.5V
-Packaging   Tape & Reel (TR)  
-Datasheets SI3812DV
-Series LITTLE FOOT庐
-Vgs(th) (Max) @ Id 600mV @ 250碌A (Min)
-FET Feature Diode (Isolated)
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss) 20V
-Standard Package   3,000
-Current - Continuous Drain (Id) @ 25掳C 2A (Ta)
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

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