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SI2323DS-T1

MOSFET P-CH 20V 3.7A SOT23

Manufacturer Vishay
MPN SI2323DS-T1
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Product Photos SOT-23-3
-Rds On (Max) @ Id, Vgs 39 mOhm @ 4.7A, 4.5V
-Power - Max 750mW
-Supplier Device Package SOT-23-3 (TO-236)
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Datasheets Si2323DS
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1V @ 250µA
-Input Capacitance (Ciss) @ Vds 1020pF @ 10V
-FET Feature Logic Level Gate
-Package / Case TO-236-3, SC-59, SOT-23-3
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
-Gate Charge (Qg) @ Vgs 19nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type MOSFET P-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

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