| -Packaging: |
Reel |
| -Qg - Gate Charge: |
6.3 nC, 6.3 nC |
| -Pd - Power Dissipation: |
32 W |
| -Package / Case: |
LFPAK56D-8 |
| -Configuration: |
2 N-Channel |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
8.9 ns, 8.9 ns |
| -Manufacturer: |
NXP |
| -Factory Pack Quantity: |
1500 |
| -Brand: |
NXP Semiconductors |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
18.2 A, 18.2 A |
| -Rise Time: |
9.2 ns, 9.2 ns |
| -Maximum Operating Temperature: |
+ 175 C |
| -Rds On - Drain-Source Resistance: |
19 mOhms, 19 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
1.4 V, 1.4 V |
| -Vgs - Gate-Source Voltage: |
10 V, 10 V |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
6.2 ns, 6.2 ns |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
10.8 ns, 10.8 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
40 V, 40 V |
| -Transistor Type: |
2 N-Channel |
