| -Mounting Type |
* |
| -Family |
Transistors - FETs, MOSFETs - Arrays |
| -Manufacturer |
Rohm Semiconductor |
| -Part Status |
Active |
| -Supplier Device Package |
Module |
| -Power - Max |
1130W |
| -FET Feature |
Silicon Carbide (SiC) |
| -Input Capacitance (Ciss) @ Vds |
23000pF @ 10V |
| -Categories |
Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| -Lead Free Status / RoHS Status |
1 |
| -RoHS |
Lead free / RoHS Compliant |
| -Vgs(th) (Max) @ Id |
4V @ 35.2mA |
| -FET Type |
2 N-Channel (Half Bridge) |
| -Category |
Discrete Semiconductor Products |
| -Current - Continuous Drain (Id) @ 25°C |
180A |
| -Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| -Package / Case |
Module |
| -Operating Temperature |
-40°C ~ 150°C (TJ) |
| -Packaging |
Bulk |
| -Input Capacitance (Ciss) (Max) @ Vds |
23000pF @ 10V |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |