| -Id - Continuous Drain Current: |
120 A |
| -RoHS: |
Details |
| -Factory Pack Quantity: |
12 |
| -Minimum Operating Temperature: |
- 40 C |
| -Series: |
BSMx |
| -Length: |
122 mm |
| -Width: |
45.6 mm |
| -Product: |
Power Semiconductor Modules |
| -Height: |
21.1 mm |
| -Configuration: |
Half-Bridge |
| -Type: |
SiC Power Module |
| -Maximum Operating Temperature: |
+ 150 C |
| -FET Feature |
Silicon Carbide (SiC) |
| -FET Type |
2 N-Channel (Half Bridge) |
| -Vgs(th) (Max) @ Id |
2.7V @ 22mA |
| -Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| -Power - Max |
780W |
| -Lead Free Status / RoHS Status |
1 |
| -RoHS |
Lead free / RoHS Compliant |
| -Product Category: |
Discrete Semiconductor Modules |
| -Brand: |
ROHM Semiconductor |
| -Operating Temperature Range: |
- 40 C to + 150 C |
| -Pd - Power Dissipation: |
780 W |
| -Manufacturer: |
ROHM Semiconductor |
| -Packaging: |
Bulk |
| -Number of Channels: |
1 Channel |
| -Vgs th - Gate-Source Threshold Voltage: |
2.7 V |
| -Vds - Drain-Source Breakdown Voltage: |
1200 V |
| -Vgs - Gate-Source Voltage: |
22 V |
| -Mounting Style: |
Screw |
| -Operating Temperature |
-40°C ~ 150°C (TJ) |
| -Categories |
Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| -Input Capacitance (Ciss) (Max) @ Vds |
14000pF @ 10V |
| -Supplier Device Package |
Module |
| -Package / Case |
Module |
| -Part Status |
Active |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
