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SI5915DC-T1-E3

MOSFET 2P-CH 8V 3.4A 1206-8

Manufacturer Vishay
MPN SI5915DC-T1-E3
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SMD, Flat Lead
-Drain to Source Voltage (Vdss) 8V
-Current - Continuous Drain (Id) @ 25°C 3.4A
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
-Operating Temperature -55°C ~ 150°C (TJ)
-Rds On (Max) @ Id, Vgs 70 mOhm @ 3.4A, 4.5V
-Power - Max 1.1W
-Supplier Device Package 1206-8 ChipFET™
-Gate Charge (Qg) @ Vgs 9nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type 2 P-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Tape & Reel (TR)

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