| -Emitter- Base Voltage VEBO: |
2 V |
| -Operating Frequency: |
8 GHz |
| -Continuous Collector Current: |
65 mA |
| -Manufacturer: |
Infineon |
| -Pd - Power Dissipation: |
450 mW |
| -Transistor Polarity: |
NPN |
| -Technology: |
Si |
| -Brand: |
Infineon Technologies |
| -Package / Case: |
SOT-363 |
| -Collector- Emitter Voltage VCEO Max: |
12 V |
| -Type: |
RF Bipolar Small Signal |
| -Mounting Style: |
SMD/SMT |
| -Maximum DC Collector Current: |
65 mA |
| -Packaging: |
Reel |
| -DC Collector/Base Gain hfe Min: |
70 |
| -Series: |
BFS483 |
| -Minimum Operating Temperature: |
- 65 C |
| -Factory Pack Quantity: |
3000 |
| -Part # Aliases: |
BFS483H6327XT BFS483H6327XTSA1 SP000750464 |
| -RoHS: |
Details |
| -Product Category: |
RF Bipolar Transistors |
| -Unit Weight: |
0.000212 oz |
| -Transistor Type: |
Bipolar |
| -Maximum Operating Temperature: |
+ 150 C |
