English 简体中文 日本語

BFR 360F H6327

BFR 360F H6327 NPN 射频双极晶体管, 35 mA, Vce=6 V, HFE:90, 14 GHz, 3针 TSFP封装

Manufacturer Infineon Technologies
MPN BFR 360F H6327
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet BFR 360F H6327.pdf
SP1034
Dollar $0.46638
RMB ¥3.87359
Stock type SP1034
Stock num 100
Stepped
num price
50+ $0.46638
750+ $0.45238
1500+ $0.43878
SP1034
Dollar $0.40829
RMB ¥3.39111
Stock type SP1034
Stock num 100
Stepped
num price
3000+ $0.40829
6000+ $0.39593
12000+ $0.3881
SP1034
Dollar $0.45238
RMB ¥3.75731
Stock type SP1034
Stock num 100
Stepped
num price
750+ $0.45238
1500+ $0.43878

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Emitter- Base Voltage VEBO: 2 V
-Operating Frequency: 3.5 GHz
-Continuous Collector Current: 35 mA
-Series: BFR360
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 3000
-Part # Aliases: BFR360FH6327XT BFR360FH6327XTSA1 SP000750428
-RoHS:  Details
-Product Category: RF Bipolar Transistors
-Gain Bandwidth Product fT: 14 GHz
-Type: RF Bipolar Small Signal
-Mounting Style: SMD/SMT
-DC Current Gain hFE Max: 160
-Packaging: Reel
-Manufacturer: Infineon
-Pd - Power Dissipation: 210 mW
-Transistor Polarity: NPN
-Technology: Si
-Brand: Infineon Technologies
-Package / Case: TSFP-3
-Collector- Emitter Voltage VCEO Max: 6 V
-Configuration: Single
-Transistor Type: Bipolar
-Maximum Operating Temperature: + 150 C

Copyright © 1997-2013 NetEase. All Rights Reserved.