BFR 340F H6327

BFR 340F H6327 NPN 射频双极晶体管, 20 mA, Vce=6 V, HFE:90, 14 GHz, 3针 TSFP封装

Manufacturer Infineon Technologies MPN BFR 340F H6327 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet BFR 340F H6327.pdf

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Product parameter

-Emitter- Base Voltage VEBO:	2 V
-Operating Frequency:	1.9 GHz
-Continuous Collector Current:	20 mA
-Manufacturer:	Infineon
-Pd - Power Dissipation:	75 mW
-Factory Pack Quantity:	3000
-Part # Aliases:	BFR340FH6327XT BFR340FH6327XTSA1 SP000750426
-RoHS:	Details
-Product Category:	RF Bipolar Transistors
-Type:	RF Bipolar Small Signal
-Mounting Style:	SMD/SMT
-Maximum DC Collector Current:	20 mA
-Packaging:	Reel
-DC Collector/Base Gain hfe Min:	90
-Series:	BFR340
-Transistor Polarity:	NPN
-Technology:	Si
-Brand:	Infineon Technologies
-Package / Case:	TSFP-3
-Collector- Emitter Voltage VCEO Max:	6 V
-Transistor Type:	Bipolar