| -Operating Frequency: |
8000 MHz |
| -Collector- Base Voltage VCBO: |
20 V |
| -Minimum Operating Temperature: |
- 65 C |
| -Technology: |
Si |
| -Height: |
1 mm |
| -Unit Weight: |
0.007090 oz |
| -Maximum DC Collector Current: |
0.065 A |
| -DC Current Gain hFE Max: |
70 at 15 mA at 8 V |
| -Manufacturer: |
Infineon |
| -Transistor Polarity: |
NPN |
| -Brand: |
Infineon Technologies |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
12 V |
| -Transistor Type: |
Bipolar |
| -Width: |
1.3 mm |
| -Packaging: |
Reel |
| -Pd - Power Dissipation: |
450 mW |
| -Package / Case: |
SOT-23 |
| -Configuration: |
Single |
| -Mounting Style: |
SMD/SMT |
| -Emitter- Base Voltage VEBO: |
2 V |
| -Length: |
2.9 mm |
| -Series: |
BFR183 |
| -Factory Pack Quantity: |
3000 |
| -Part # Aliases: |
BFR183E6327HTSA1 BFR183E6327XT SP000011054 |
| -Product Category: |
RF Bipolar Transistors |
| -Type: |
RF Bipolar Small Signal |
| -Maximum Operating Temperature: |
+ 150 C |
