BFR 106 E6327

BFR 106 E6327 NPN 射频双极晶体管, 210 mA, Vce=16 V, HFE:70, 5 GHz, 3针 SOT-23封装

Manufacturer Infineon Technologies MPN BFR 106 E6327 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet BFR 106 E6327.pdf

SP1028 Dollar $0.11935 RMB ￥0.99128 Stock type SP1028 Stock num 258 Stepped num price 1+ $0.11935 1+ $0.11935 10+ $0.1147 10+ $0.1147 50+ $0.1116 50+ $0.1116 100+ $0.11005 100+ $0.11005 500+ $0.11005 500+ $0.11005 1000+ $0.11005 1000+ $0.11005 2000+ $0.11005 2000+ $0.11005 4000+ $0.11005 4000+ $0.11005 SP1034 Dollar $0.4153 RMB ￥3.44934 Stock type SP1034 Stock num 200 Stepped num price 50+ $0.4153 750+ $0.40294 1500+ $0.39058 SP1034 Dollar $0.40294 RMB ￥3.34668 Stock type SP1034 Stock num 3200 Stepped num price 750+ $0.40294 1500+ $0.39058 SP1034 Dollar $0.40829 RMB ￥3.39111 Stock type SP1034 Stock num 3200 Stepped num price 3000+ $0.40829 6000+ $0.39593 12000+ $0.38975

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Demand quantity		Target price
Contact number		name
company		email

Product parameter

-Noise Figure (dB Typ @ f)	1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
-Package / Case	TO-236-3, SC-59, SOT-23-3
-Gain	8.5dB ~ 13dB
-Supplier Device Package	PG-SOT23-3
-Part Status	Active
-Manufacturer	Infineon Technologies
-Family	Transistors - Bipolar (BJT) - RF
-DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 70mA, 8V
-Frequency - Transition	5GHz
-Power - Max	700mW
-Transistor Type	NPN
-Current - Collector (Ic) (Max)	210mA
-Category	Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max)	15V
-Mounting Type	Surface Mount
-Packaging	Cut Tape (CT)