| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| -Resistor - Base (R1) (Ohms) |
10k |
| -Power - Max |
100mW |
| -Resistor - Emitter Base (R2) (Ohms) |
10k |
| -Current - Collector (Ic) (Max) |
100mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Surface Mount |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 10mA, 5V |
| -Frequency - Transition |
200MHz |
| -Package / Case |
SOT-563, SOT-666 |
| -Transistor Type |
2 PNP - Pre-Biased (Dual) |
| -Supplier Device Package |
ES6 |
| -Part Status |
Obsolete |
| -Manufacturer |
Toshiba Semiconductor and Storage |
| -Family |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| -Current - Collector Cutoff (Max) |
100nA (ICBO) |
| -Packaging |
Tape & Reel (TR) |
