| -Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
| -Resistor - Base (R1) (Ohms) |
10k |
| -Power - Max |
250mW |
| -Resistor - Emitter Base (R2) (Ohms) |
47k |
| -Current - Collector (Ic) (Max) |
100mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Surface Mount |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 5mA, 5V |
| -Frequency - Transition |
180MHz |
| -Package / Case |
3-XFDFN |
| -Transistor Type |
PNP - Pre-Biased |
| -Supplier Device Package |
3-DFN1006B (0.6x1) |
| -Part Status |
Active |
| -Manufacturer |
NXP USA Inc. |
| -Family |
Transistors - Bipolar (BJT) - Single, Pre-Biased |
| -Current - Collector Cutoff (Max) |
1µA |
| -Packaging |
Tape & Reel (TR) |
