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IXBT42N170A

Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268

制造商 IXYS Corporation
制造商零件编号 IXBT42N170A
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Current - Collector Pulsed (Icm) 265A
-Power - Max 357W
-Supplier Device Package TO-268
-Current - Collector (Ic) (Max) 42A
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 330ns
-Voltage - Collector Emitter Breakdown (Max) 1700V
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 6V @ 15V, 21A
-Input Type Standard
-Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-Test Condition 850V, 21A, 1 Ohm, 15V
-Td (on/off) @ 25°C 19ns/200ns
-Part Status Active
-Manufacturer IXYS
-Gate Charge 188nC
-Series BIMOSFET™
-Mounting Type Surface Mount
-Switching Energy 3.43mJ (on), 430µJ (off)
-Packaging Tube

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