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IRF9910TR

MOSFET 2N-CH 20V 10A 8-SOIC

制造商 Infineon Technologies
制造商零件编号 IRF9910TR
标准包装 4000
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 10A, 12A
-Part Status Obsolete
-Manufacturer Infineon Technologies
-Series HEXFET®
-Vgs(th) (Max) @ Id 2.55V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 13.4 mOhm @ 10A, 10V
-Power - Max 2W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 11nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 900pF @ 10V

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