English 简体中文 日本語

GT10J312(Q)

IGBT 600V 10A 60W TO220SM

制造商 Toshiba
制造商零件编号 GT10J312(Q)
标准包装 50
ECCN --
Schedule B --
RoHS --
规格说明书 --

询价

需求数量 目标价格
联系电话 姓名
公司 邮箱

产品参数

-Current - Collector Pulsed (Icm) 20A
-Power - Max 60W
-Supplier Device Package TO-220SM
-Current - Collector (Ic) (Max) 10A
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 200ns
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
-Packaging Tube
-Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
-Test Condition 300V, 10A, 100 Ohm, 15V
-Td (on/off) @ 25°C 400ns/400ns
-Part Status Obsolete
-Manufacturer Toshiba Semiconductor and Storage
-Voltage - Collector Emitter Breakdown (Max) 600V
-Mounting Type Surface Mount
-Input Type Standard

Copyright © 1997-2013 NetEase. All Rights Reserved.