| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 100µA, 1mA |
| -Power - Max |
360mW |
| -Supplier Device Package |
UB |
| -Part Status |
Active |
| -Manufacturer |
Microsemi Corporation |
| -Family |
Transistors - Bipolar (BJT) - Single |
| -Current - Collector Cutoff (Max) |
2nA |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
225 @ 10mA, 5V |
| -Package / Case |
3-SMD, No Lead |
| -Transistor Type |
NPN |
| -Current - Collector (Ic) (Max) |
50mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
60V |
| -Mounting Type |
Surface Mount |
| -Operating Temperature |
-65°C ~ 200°C (TJ) |
| -Packaging |
Bulk |
