| -Rds On - Drain-Source Resistance: |
4 mOhms |
| -Product: |
Power MOSFET Modules |
| -Pd - Power Dissipation: |
1.25 kW |
| -Package / Case: |
SP-6 |
| -Height: |
21.9 mm |
| -Vgs - Gate-Source Voltage: |
30 V |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
32 ns |
| -Manufacturer: |
Microsemi |
| -Factory Pack Quantity: |
50 |
| -Typical Turn-Off Delay Time: |
88 ns |
| -Product Category: |
Discrete Semiconductor Modules |
| -Rise Time: |
64 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
62 mm |
| -Minimum Operating Temperature: |
- 40 C |
| -Tradename: |
POWER MOS 7 |
| -Vgs th - Gate-Source Threshold Voltage: |
3 V |
| -Configuration: |
Single |
| -Mounting Style: |
Screw |
| -Fall Time: |
116 ns |
| -Length: |
108 mm |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Microsemi |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
372 A |
| -Vds - Drain-Source Breakdown Voltage: |
200 V |
| -ECCN |
EAR99 |
