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APTM100H45STG

MOSFET 4N-CH 1000V 18A SP4

Manufacturer Microchip Technology
MPN APTM100H45STG
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet APTM100H45STG.pdf

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Product parameter

-Package / Case SP4
-FET Feature Standard
-Drain to Source Voltage (Vdss) 1000V (1kV)
-Current - Continuous Drain (Id) @ 25°C 18A
-Part Status Active
-Manufacturer Microsemi Corporation
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Chassis Mount
-Input Capacitance (Ciss) @ Vds 4350pF @ 25V
-Rds On (Max) @ Id, Vgs 540 mOhm @ 9A, 10V
-Power - Max 357W
-Supplier Device Package SP4
-Gate Charge (Qg) @ Vgs 154nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 4 N-Channel (H-Bridge)
-Vgs(th) (Max) @ Id 5V @ 2.5mA
-Operating Temperature -40°C ~ 150°C (TJ)
-Packaging Bulk

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