APTM100H45STG

MOSFET 4N-CH 1000V 18A SP4

制造商 Microchip Technology 制造商零件编号 APTM100H45STG 标准包装 1000 ECCN -- Schedule B -- RoHS -- 规格说明书 APTM100H45STG.pdf

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Package / Case	SP4
-FET Feature	Standard
-Drain to Source Voltage (Vdss)	1000V (1kV)
-Current - Continuous Drain (Id) @ 25°C	18A
-Part Status	Active
-Manufacturer	Microsemi Corporation
-Family	Transistors - FETs, MOSFETs - Arrays
-Mounting Type	Chassis Mount
-Input Capacitance (Ciss) @ Vds	4350pF @ 25V
-Rds On (Max) @ Id, Vgs	540 mOhm @ 9A, 10V
-Power - Max	357W
-Supplier Device Package	SP4
-Gate Charge (Qg) @ Vgs	154nC @ 10V
-Category	Discrete Semiconductor Products
-FET Type	4 N-Channel (H-Bridge)
-Vgs(th) (Max) @ Id	5V @ 2.5mA
-Operating Temperature	-40°C ~ 150°C (TJ)
-Packaging	Bulk