| -Continuous Collector Current Ic Max: |
208 A |
| -Pd - Power Dissipation: |
892 W |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -RoHS: |
Details |
| -Gate-Emitter Leakage Current: |
+/- 250 nA |
| -Collector- Emitter Voltage VCEO Max: |
650 V |
| -Mounting Style: |
Through Hole |
| -Maximum Operating Temperature: |
+ 150 C |
| -Manufacturer: |
Microsemi |
| -Continuous Collector Current at 25 C: |
208 A |
| -Factory Pack Quantity: |
59 |
| -Brand: |
Microsemi |
| -Package / Case: |
TO-247-3 |
| -Product Category: |
IGBT Transistors |
| -Configuration: |
Single |
| -Maximum Gate Emitter Voltage: |
+/- 30 V |
