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APT65GP60L2DQ2G

Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX

Manufacturer Microchip Technology
MPN APT65GP60L2DQ2G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Power - Max 833W
-Current - Collector Pulsed (Icm) 250A
-IGBT Type PT
-Td (on/off) @ 25°C 30ns/90ns
-Part Status Not For New Designs
-Manufacturer Microsemi Corporation
-Voltage - Collector Emitter Breakdown (Max) 600V
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
-Input Type Standard
-Package / Case TO-264-3, TO-264AA
-Test Condition 400V, 65A, 5 Ohm, 15V
-Supplier Device Package *
-Current - Collector (Ic) (Max) 198A
-Category Discrete Semiconductor Products
-Gate Charge 210nC
-Series POWER MOS 7®
-Mounting Type Through Hole
-Switching Energy 605µJ (on), 895µJ (off)
-Packaging Tube

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