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APT50GS60BRDQ2G

APT50GS60BRDQ2G Series 600 V 93 A Thunderbolt® High Speed NPT IGBT

Manufacturer Microchip Technology
MPN APT50GS60BRDQ2G
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Packaging: Tube
-Collector-Emitter Saturation Voltage: 2.8 V
-Minimum Operating Temperature: - 55 C
-Pd - Power Dissipation: 415 W
-Gate-Emitter Leakage Current: 100 nA
-Height: 5.31 mm
-Mounting Style: Through Hole
-Continuous Collector Current Ic Max: 93 A
-Continuous Collector Current: 93 A
-Factory Pack Quantity: 57
-RoHS:  Details
-Collector- Emitter Voltage VCEO Max: 600 V
-Maximum Operating Temperature: + 150 C
-Width: 16.26 mm
-Continuous Collector Current at 25 C: 93 A
-Operating Temperature Range: - 55 C to + 150 C
-Tradename: Thunderbolt HS
-Package / Case: TO-247-3
-Configuration: Single
-Unit Weight: 1.340411 oz
-Length: 21.46 mm
-Manufacturer: Microsemi
-Brand: Microsemi
-Product Category: IGBT Transistors
-Maximum Gate Emitter Voltage: 30 V
-ECCN EAR99

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