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APT35GP120B2DQ2G

Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max

Manufacturer Microchip Technology
MPN APT35GP120B2DQ2G
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Power - Max 543W
-Current - Collector Pulsed (Icm) 140A
-IGBT Type PT
-Td (on/off) @ 25°C 16ns/95ns
-Part Status Active
-Manufacturer Microsemi Corporation
-Voltage - Collector Emitter Breakdown (Max) 1200V
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
-Input Type Standard
-Package / Case TO-247-3 Variant
-Test Condition 600V, 35A, 4.3 Ohm, 15V
-Supplier Device Package *
-Current - Collector (Ic) (Max) 96A
-Category Discrete Semiconductor Products
-Gate Charge 150nC
-Series POWER MOS 7®
-Mounting Type Through Hole
-Switching Energy 750µJ (on), 680µJ (off)
-Packaging Tube

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