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| Demand quantity | Target price | ||
| Contact number | name | ||
| company | |||
| -Power - Max | 417W |
| -Current - Collector Pulsed (Icm) | 110A |
| -IGBT Type | PT |
| -Td (on/off) @ 25°C | 13ns/55ns |
| -Part Status | Not For New Designs |
| -Manufacturer | Microsemi Corporation |
| -Voltage - Collector Emitter Breakdown (Max) | 900V |
| -Family | Transistors - IGBTs - Single |
| -Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
| -Input Type | Standard |
| -Package / Case | TO-247-3 |
| -Test Condition | 600V, 25A, 5 Ohm, 15V |
| -Supplier Device Package | TO-247 [B] |
| -Current - Collector (Ic) (Max) | 72A |
| -Category | Discrete Semiconductor Products |
| -Gate Charge | 110nC |
| -Series | POWER MOS 7® |
| -Mounting Type | Through Hole |
| -Switching Energy | 370µJ (off) |
| -Packaging | Tube |
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