| -Collector-Emitter Saturation Voltage: |
1.7 V |
| -Continuous Collector Current Ic Max: |
67 A |
| -Length: |
16.05 mm |
| -Pd - Power Dissipation: |
272 W |
| -Minimum Operating Temperature: |
- 55 C |
| -Factory Pack Quantity: |
71 |
| -RoHS: |
Details |
| -Gate-Emitter Leakage Current: |
600 nA |
| -Collector- Emitter Voltage VCEO Max: |
1.2 kV |
| -Configuration: |
Single |
| -Maximum Operating Temperature: |
+ 150 C |
| -ECCN |
EAR99 |
| -Width: |
13.99 mm |
| -Continuous Collector Current: |
67 A |
| -Manufacturer: |
Microsemi |
| -Operating Temperature Range: |
- 55 C to + 150 C |
| -Continuous Collector Current at 25 C: |
67 A |
| -Brand: |
Microsemi |
| -Package / Case: |
D3PAK-3 |
| -Product Category: |
IGBT Transistors |
| -Height: |
5.08 mm |
| -Mounting Style: |
SMD/SMT |
| -Maximum Gate Emitter Voltage: |
30 V |
