English 简体中文 日本語

ZXMN6A09DN8TC

MOSFET 2N-CH 60V 4.3A 8SOIC

Manufacturer Diodes Incorporated
MPN ZXMN6A09DN8TC
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 60V
-Current - Continuous Drain (Id) @ 25°C 4.3A
-Gate Charge (Qg) @ Vgs 24.2nC @ 5V
-FET Type 2 N-Channel (Dual)
-Vgs(th) (Max) @ Id 3V @ 250µA
-Input Capacitance (Ciss) @ Vds 1407pF @ 40V
-Rds On (Max) @ Id, Vgs 40 mOhm @ 8.2A, 10V
-Power - Max 1.25W
-Supplier Device Package 8-SOP
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Family FETs - Arrays
-Mounting Type Surface Mount

Copyright © 1997-2013 NetEase. All Rights Reserved.