ZXMN3A06DN8TC

MOSFET 2N-CH 30V 4.9A 8SOIC

Manufacturer Diodes Incorporated MPN ZXMN3A06DN8TC SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	30V
-Current - Continuous Drain (Id) @ 25°C	4.9A
-Gate Charge (Qg) @ Vgs	17.5nC @ 10V
-FET Type	2 N-Channel (Dual)
-Vgs(th) (Max) @ Id	1V @ 250µA (Min)
-Input Capacitance (Ciss) @ Vds	796pF @ 25V
-Rds On (Max) @ Id, Vgs	35 mOhm @ 9A, 10V
-Power - Max	1.8W
-Supplier Device Package	8-SOP
-Standard Package	2,500
-Packaging	Tape & Reel (TR)
-Family	FETs - Arrays
-Mounting Type	Surface Mount