ZXMN10A08DN8TC

MOSFET 2N-CH 100V 1.6A 8SOIC

Manufacturer Diodes Incorporated MPN ZXMN10A08DN8TC SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	1.6A
-Gate Charge (Qg) @ Vgs	7.7nC @ 10V
-FET Type	2 N-Channel (Dual)
-Vgs(th) (Max) @ Id	2V @ 250µA (Min)
-Input Capacitance (Ciss) @ Vds	405pF @ 50V
-Rds On (Max) @ Id, Vgs	250 mOhm @ 3.2A, 10V
-Power - Max	1.25W
-Supplier Device Package	8-SOP
-Standard Package	2,500
-Packaging	Tape & Reel (TR)
-Family	FETs - Arrays
-Mounting Type	Surface Mount