| -Width: |
4 mm |
| -Rds On - Drain-Source Resistance: |
65 mOhms |
| -Pd - Power Dissipation: |
2.1 W |
| -Package / Case: |
SOIC-8 |
| -Configuration: |
Dual Dual Drain |
| -Unit Weight: |
0.002610 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
2.9 ns, 1.7 ns |
| -Manufacturer: |
Diodes Incorporated |
| -Transistor Polarity: |
N-Channel, P-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
16 ns, 29.2 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
30 V |
| -Type: |
MOSFET |
| -Maximum Operating Temperature: |
+ 150 C |
| -Packaging: |
Reel |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Height: |
1.5 mm |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
11.2 ns, 8.7 ns |
| -Length: |
5 mm |
| -Series: |
ZXMC3 |
| -Factory Pack Quantity: |
500 |
| -Brand: |
Diodes Incorporated |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
5.4 A |
| -Rise Time: |
6.4 ns, 2.9 ns |
| -Transistor Type: |
1 N-Channel, 1 P-Channel |
| -ECCN |
EAR99 |
