VMM650-01F

Dual N-Channel 100 V 680 A 2.2 mΩ Chassis Mount HiPerFET Power Mosfet - Y3-Li

Manufacturer IXYS Corporation MPN VMM650-01F SPQ 2 ECCN EAR99 Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	Y3-Li
-Supplier Device Package	Y3-Li
-Gate Charge (Qg) @ Vgs	1440nC @ 10V
-Category	Discrete Semiconductor Products
-FET Type	2 N-Channel (Dual)
-Family	Transistors - FETs, MOSFETs - Arrays
-Mounting Type	Chassis Mount
-Packaging	Bulk
-Rds On (Max) @ Id, Vgs	2.2 mOhm @ 500A, 10V
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	680A
-Part Status	Active
-Manufacturer	IXYS
-Series	HiPerFET™
-Vgs(th) (Max) @ Id	4V @ 30mA
-Operating Temperature	-40°C ~ 150°C (TJ)
-ECCN	EAR99