| -Vce Saturation (Max) @ Ib, Ic |
250mV @ 300µA, 10mA |
| -Resistor - Base (R1) (Ohms) |
4.7k |
| -Power - Max |
300mW |
| -Resistor - Emitter Base (R2) (Ohms) |
10k |
| -Catalog Drawings |
NS-B1 Type Side NS-B1 Type Front |
| -Current - Collector (Ic) (Max) |
100mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Through Hole |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 10V |
| -Frequency - Transition |
150MHz |
| -Package / Case |
NS-B1 |
| -Transistor Type |
NPN - Pre-Biased |
| -Supplier Device Package |
NS-B1 |
| -Standard Package |
5,000 |
| -Packaging |
Tape & Box (TB) |
| -Family |
Transistors (BJT) - Single, Pre-Biased |
| -Current - Collector Cutoff (Max) |
500nA |
