English 简体中文 日本語

UNR221100L

TRANS PREBIAS NPN 200MW MINI3

Manufacturer Panasonic
MPN UNR221100L
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300碌A, 10mA
-Resistor - Base (R1) (Ohms) 10k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 10k
-Catalog Drawings PNP, NPN Mini Type
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
-Frequency - Transition 150MHz
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type NPN - Pre-Biased
-Supplier Device Package Mini3-G1
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

Copyright © 1997-2013 NetEase. All Rights Reserved.