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UMF4NTR

TRANS NPN PREBIAS/PNP 0.15W UMT6

制造商 ROHM Semiconductor
制造商零件编号 UMF4NTR
标准包装 3000
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 2.2k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Part Status Not For New Designs
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz, 260MHz
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 1 NPN Pre-Biased, 1 PNP
-Supplier Device Package UMT6
-Current - Collector (Ic) (Max) 100mA, 500mA
-Voltage - Collector Emitter Breakdown (Max) 50V, 12V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V / 270 @ 10mA, 2V
-Resistor - Base (R1) 2.2 kOhms
-Manufacturer Rohm Semiconductor

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