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| Demand quantity | Target price | ||
| Contact number | name | ||
| company | |||
| -Forward Transconductance - Min: | 10 mS |
| -Manufacturer: | InterFET |
| -Transistor Polarity: | N-Channel |
| -Technology: | Si |
| -RoHS: | Details |
| -Vgs - Gate-Source Breakdown Voltage: | - 25 V |
| -Id - Continuous Drain Current: | 1 nA |
| -Configuration: | Dual |
| -Mounting Style: | Through Hole |
| -Drain-Source Current at Vgs=0: | 60 mA |
| -Pd - Power Dissipation: | 500 mW |
| -Factory Pack Quantity: | 1 |
| -Brand: | InterFET |
| -Package / Case: | TO-78-3 |
| -Product Category: | JFET |
| -Vds - Drain-Source Breakdown Voltage: | 10 V |
| -Gate-Source Cutoff Voltage: | - 6 V |
| -ECCN | EAR99 |
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