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TPC8213-H(TE12LQ,M

MOSFET 2N-CH 60V 5A SOP8

Manufacturer Toshiba
MPN TPC8213-H(TE12LQ,M
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.173", 4.40mm Width)
-Drain to Source Voltage (Vdss) 60V
-Standard Package   3,000
-Current - Continuous Drain (Id) @ 25掳C 5A
-FET Type 2 N-Channel (Dual)
-Vgs(th) (Max) @ Id 2.3V @ 1mA
-Input Capacitance (Ciss) @ Vds 625pF @ 10V
-Rds On (Max) @ Id, Vgs 50 mOhm @ 2.5A, 10V
-Power - Max 450mW
-Supplier Device Package 8-SOP (5.5x6.0)
-Gate Charge (Qg) @ Vgs 11nC @ 10V
-Packaging   Tape & Reel (TR)  
-Family FETs - Arrays
-Mounting Type Surface Mount

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