TPC8211(TE12L,Q,M)

MOSFET 2N-CH 30V 5.5A SOP8

Manufacturer Toshiba MPN TPC8211(TE12L,Q,M) SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.173", 4.40mm Width)
-Drain to Source Voltage (Vdss)	30V
-Standard Package	3,000
-Current - Continuous Drain (Id) @ 25掳C	5.5A
-FET Type	2 N-Channel (Dual)
-Vgs(th) (Max) @ Id	2.5V @ 1mA
-Input Capacitance (Ciss) @ Vds	1250pF @ 10V
-Rds On (Max) @ Id, Vgs	36 mOhm @ 3A, 10V
-Power - Max	450mW
-Supplier Device Package	8-SOP (5.5x6.0)
-Gate Charge (Qg) @ Vgs	25nC @ 10V
-Packaging	Tape & Reel (TR)
-Family	FETs - Arrays
-Mounting Type	Surface Mount